SMD RTD elements

Part number 5164075 is supplied on a wafer frame, while 5195006 is supplied in a blister reel. The sensing element is common to both variants: Pt1000 with a 3850 ppm/K temperature coefficient, F 0.6 (2B) tolerance, a -50 to +200 °C continuous range and the same SMD 1206 SC dimensions. The face-up reel holds up to 4,200 pieces and is suitable for reel-based component handling. The wafer-frame version is intended for production equipment configured for die or frame handling before sintering. Both formats have an MSL 1 classification and a minimum unopened storage period of nine months, so selection is primarily an assembly-logistics decision.

Yes, provided the assembly process supports backside silver sintering and upper-side ultrasonic thick-wire bonding. The backside has AgPd thick-film metallisation, with sintered-joint shear strength specified above 10 N/mm² minimum and above 20 N/mm² mean. The upper AgPt surface is intended for bonding and has a stated pull force above 210 cN when evaluated with 300 µm Al H11 thick wire. Positioning the sensor close to the die shortens the thermal path and can reduce the temperature difference between the sensing element and heat source. The finished design still requires process validation covering the substrate finish, sinter paste, pressure, thermal cycle, bond settings and encapsulation.

Use a measuring current between 0.1 and 0.3 mA, choosing the lowest value that still provides the required signal quality and noise margin. At approximately 1,000 Ω, this current range produces about 0.01 to 0.09 mW of electrical power in the sensor. Applying the unassembled self-heating coefficient of less than 0.4 K/mW gives an estimated temperature rise below approximately 0.004 to 0.036 K under that reference condition. Actual self-heating depends on the sinter joint, substrate, airflow, encapsulation and surrounding thermal mass. The assembled sensor should therefore be verified at the intended excitation current, sampling duty cycle and operating temperature.

F 0.6 (2B) defines the element’s permitted deviation from the nominal DIN EN IEC 60751 resistance-temperature characteristic during continuous operation from -50 to +200 °C. The 3850 ppm/K temperature coefficient establishes the nominal resistance slope used by the measurement circuit. This component tolerance does not include excitation-current accuracy, analogue front-end error, ADC error, interconnection resistance, thermal gradients or self-heating. A system-level error budget should combine all these contributions across the operating range rather than treating the RTD class as the accuracy of the finished instrument. Calibration can correct repeatable electronic offsets, but mounting-related thermal errors must be evaluated in the actual assembly.

Applications above +200 °C are indicated as possible, but the declared F 0.6 (2B) continuous tolerance range ends at +200 °C. The long-term test programme includes 1,000 hours at +200 °C and 1,000 temperature cycles between -40 and +150 °C, rather than a defined tolerance or service-life rating above +200 °C. Engineers should not extrapolate the specified class accuracy, drift or insulation behaviour beyond the declared range. Sinter-joint materials, bond wires, substrate expansion and encapsulation may also become limiting factors at higher temperatures. Operation above +200 °C should therefore be treated as a separately validated application with explicitly agreed performance limits.

Maximum R₀ drift is limited to 0.23% after each of three independently performed tests: 1,000 hours at +200 °C, 1,000 hours at +85 °C and 85% relative humidity, and 1,000 cycles from -40 to +150 °C. For a Pt1000 element, 0.23% corresponds to 2.3 Ω at 0 °C. With a nominal sensitivity of approximately 3.85 Ω/K near 0 °C, that resistance change is equivalent to roughly 0.6 K before other errors are included. The tests are independent and do not represent every possible combination of humidity, excitation current, temperature cycling and mounting stress. Use the 0.23% limit as a component-level ageing contribution and add suitable system margin for the intended operating profile.

No, the 7.5 kV value is a theoretical component-level figure based on the substrate material properties and sensor geometry. Assembly processing, encapsulation, the selected potting material and the shape of the potting meniscus can reduce the achieved withstand voltage. The separate insulation resistance above 1,000 MΩ at 20 °C indicates low leakage under the stated condition, but it does not replace high-voltage qualification. Creepage, clearance, substrate construction, contamination, humidity and thermal cycling must be assessed at module level. The finished assembly should be validated using the withstand-voltage and insulation tests required for its working voltage and applicable safety standard.