SMD SC (sinterable series)

Use -50 °C to +200 °C as the continuous design range when Class F 0.6 (2B) performance is required. The product information also states that the maximum operating temperature exceeds +200 °C, but it does not define an exact ceiling or an accuracy class beyond +200 °C. Operation above the specified class range should therefore be treated as an application-specific condition rather than a general rated point. Bonding, sinter materials, encapsulation and thermal cycling may become the limiting factors before the platinum element itself. For designs expected to cross +200 °C, confirm the allowable exposure profile and qualify the complete assembly before setting control or protection thresholds.

Attach the backside by silver sintering and make the electrical connections to the topside by ultrasonic thick-wire bonding. The backside uses AgPd thick-film metallisation and was evaluated with ASP 338 or 043 series sinter paste, while the topside uses AgPt metallisation with Ø300 µm Al H11 thick wire. Backside shear results are stated as greater than 10 N/mm² minimum and greater than 20 N/mm² mean; the topside pull result is greater than 210 cN. These values depend on the stated materials and process conditions, so they should not be transferred directly to a different assembly stack. Establish and validate the actual sintering, bonding, cleaning and encapsulation windows on the intended substrate.

Use a measuring current between 0.1 and 0.3 mA, then verify self-heating in the finished thermal stack. At 0 °C, a Pt1000 element dissipates about 0.01 mW at 0.1 mA and 0.09 mW at 0.3 mA. With the unassembled self-heating coefficient below 0.4 K/mW, those figures correspond to less than approximately 0.004 K and 0.036 K respectively under the stated test condition. Resistance and power rise with temperature when a constant current is used, while the mounted thermal path may behave differently from the unassembled element. Choose the lower end of the current range where the measurement uncertainty budget is tight, and confirm the final error experimentally.

The stated long-term stability limit is a maximum R₀ drift of 0.23% after the defined standard tests. For a Pt1000 sensor, 0.23% corresponds to 2.3 Ω; using 3.85 Ω/K near 0 °C, that is approximately 0.6 K if treated solely as an equivalent resistance shift rather than total measurement error. The tests comprise 1,000 hours at +200 °C with at least 0.1 mA, 1,000 hours at +85 °C and 85% relative humidity, and 1,000 cycles between -40 °C and +150 °C. These results support component qualification but do not predict every mounting or mission profile. Include interface drift, electronics error and any calibration interval in the system-level error budget.

The element provides an insulation resistance above 1,000 MΩ at 20 °C and a stated dielectric strength of 7.5 kV. The dielectric figure is based on theoretical substrate properties and the given sensor geometry, so it is not a guaranteed withstand rating for the completed assembly. Potting material, the potting meniscus, contamination, bond-wire geometry and processing can reduce the practical value. Creepage, clearance and isolation coordination must therefore be designed at system level rather than inferred from the sensor alone. Where the part is placed near a high-side power semiconductor, perform high-potential, humidity and thermal-cycling tests on the final stack.

Choose 5164075 for wafer-frame supply and 5195006 for blister-reel supply; the sensing, dimensional and temperature data are otherwise common. The blister format uses 8 mm tape with a 3.55 × 1.95 × 0.8 mm cavity, 4 mm step and Ø1.5 mm sprocket feature. It is supplied face-up with a stated maximum of approximately 4,200 pieces per reel, while lower quantities down to 250 pieces may be possible in individual cases. Wafer-frame supply is generally aligned with die-attach handling, whereas reel supply can suit automated component placement, subject to equipment compatibility. Both formats require process review for pick-up tooling, orientation and placement force.

Yes, the construction is intended for mounting on power electronic boards close to a heat source or semiconductor die. Its 3.1 × 1.5 × 0.55 mm body allows local placement, while backside silver sintering creates a short conductive thermal interface and the topside contacts keep the electrical connection above the substrate. No numerical response-time value is defined, so the actual dynamic behaviour must be established with the selected substrate, sinter thickness, encapsulation and cooling conditions. Thermal modelling should be followed by a step-response test using the intended readout current and filtering. This confirms whether the sensor follows the local die region closely enough for control, derating or protection.