High Power GaN from Toshiba
- Technology
- Amplifiers
Bringing excellent RF performance, Toshiba’s GaN Power transistors focus within defence and radar applications and remain at the cutting edge of this fast-emerging technology.
As one of the world’s first manufacturers to bring high power GaN to mass production, our history and knowledge remains a key ingredient in the success of this reliable high-performance product range.
Below you will see a sample of the product range, however please enquire to your local Acal BFI sales experts if you have a specific need to be addressed.
Range features
A high level overview of what this range offers
- High power
- High Gain
- Hermetically sealed packages available
- Broad band internally matched FET
- Select modules feature low intermodulation distortion
- Highest output power of any internally match C-Band device in the world
- Constant innovation to push the boundaries of output power
- New extended KU devices 13.75-14.5GHz
- New X-Band devices released this year
- Highest gain and efficiency ratings across Radar and Satcom application
Downloads
for High Power GaN from Toshiba
