InAs and InAsSb Photodetectors
- Technology
- Infrared photodetectors
- Partner
- VIGO System
Photovoltaic detectors (photodiodes) in which the semiconductor layer is made of InAs or InAsSb materials. Absorbed photons produce charge carriers that are collected at the diodes have complex current-voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage and VIGO’s InAsSb detectors can go up to 2TE. These detectors are cadmium and mercury-free. As a result, the detectors comply with the RoHS directive and can be used in the consumer market.
Range features
A high level overview of what this range offers
- Optimal Wavelengths: 3µm or 5µm
- Packages: TO39, TO8
- Operating temperature: 300K or 230K
- Coolings: Uncooled, 2TE
- Time constants: Up to < 5ns
- Windows: None, Al2O3
- Type: PV
- Detectivity: Up to > 5 x 1011
What’s in this range?
All the variants in the range and a comparison of what they offer
| Type | Wavelength peak (µm) | Time constant (ns) | Cooling | Detectivity (cm.Hz1/2.W-1) |
|---|---|---|---|---|
PVA-3 | 3 | < 20 | Uncooled | Up to > 5 x 109 |
PVA-5 | 5 | < 60 | Uncooled | Up to > 5 x 108 |
PVA-3-2TE | 3 | < 15 | 2TE | Up to > 5 x 1010 |
PVA-5-2TE | 5 | < 20 | 2TE | Up to > 4 x 109 |
PVIA-3 | 3 | < 20 | Uncooled | Up to > 5 x 1010 |
PVIA-5 | 5 | < 15 | Uncooled | Up to > 5 x 109 |
PVIA-3-2TE | 3 | < 15 | 2TE | Up to > 5 x 1011 |
PVIA-5-2TE | 5 | < 5 | 2TE | Up to > 4 x 1010 |
