Netherlands
High Power GaN from Toshiba
Supplier: Toshiba - RF
Technology type: Amplifiers
Bringing excellent RF performance, Toshiba’s GaN Power transistors focus within defence and radar applications and remain at the cutting edge of this fast-emerging technology.
As one of the world’s first manufacturers to bring high power GaN to mass production, our history and knowledge remains a key ingredient in the success of this reliable high-performance product range.
Below you will see a sample of the product range, however please enquire to your local Acal BFI sales experts if you have a specific need to be addressed.
Range features
A high level overview of what this range offers
- High power
- High Gain
- Hermetically sealed packages available
- Broad band internally matched FET
- Select modules feature low intermodulation distortion
- Highest output power of any internally match C-Band device in the world
- Constant innovation to push the boundaries of output power
- New extended KU devices 13.75-14.5GHz
- New X-Band devices released this year
- Highest gain and efficiency ratings across Radar and Satcom application
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Creating custom solutions and navigating adding challenging connectivity to an application requires specialist expertise and capabilities. Our team of hardware design and software application engineers have extensive experience, ensuring we can bring your concept to life.
Covering proof of concept and feasibility studies for development, through to working prototype realisation and initial production management, our team delivers you complete project support.
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Associated technologies
Sensors
Interconnect
Imaging
