Silicon Photodiodes
- Technology
- UV and visible photodetectors
- Partner
- OSI Laser Diode Inc.
OSI-OE’s silicon photodiodes are silicon-based semiconductor light sensors that generate photocurrent when its active area is illuminated by light.
This range includes tailored silicon photodiode solutions for a multitude of high-sensitivity applications. These silicon photodiodes are available as single elements, quadrants, and arrays, and are suitable for soft X-ray to visible and near-infrared.
Range features
A high level overview of what this range offers
- Silicon and GaAs photodiodes and APD
- Wavelengths: < 100nm to 1100nm
- Photodiode filter assembly to gain production efficiency
- Photodiode amplifier hybrids in one chip
- Back-thinned photodiodes to detect gamma and X-ray radiations for medical applications
- Two colour sandwich detectors for wider ranges of wavelengths (hybrid – Si and InGaAs or GaAs)
- High-speed photodiodes up to 1.25Gbps
- Photodiode arrays customised with APD or PIN and optimised in wavelengths and size
- Nd-YAG optimised photodiodes
What’s in this range?
All the variants in the range and a comparison of what they offer
| Model | Wavelength | Detectivity | Surface | Technology |
|---|---|---|---|---|
SiPD series | 350 – 1100nm | 0.65A/W | Custom higher than 100mm² | PIN |
SiBTPD | 150 – 1150nm | 0.65A/W | Up to 100mm² | Back-thinned photodiode |
SiXUV series | 18keV – 6eV | 10000e-/photon | Up to 100mm² | High perf no scintillator needed |
SiAPD series | 400 – 1000nm | 50A/W | 20mm² | Avalanche photodiodes |
