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High Power GaN from Toshiba

Bringing several times the output power capability of GaAs solutions.

Supplier: Toshiba - RF

Toshiba logo

Technology type: Amplifiers

Bringing excellent RF performance, Toshiba’s GaN Power transistors focus within defence and radar applications and remain at the cutting edge of this fast-emerging technology.

As one of the world’s first manufacturers to bring high power GaN to mass production, our history and knowledge remains a key ingredient in the success of this reliable high-performance product range.

Below you will see a sample of the product range, however please enquire to your local Acal BFI sales experts if you have a specific need to be addressed.

Range features

A high level overview of what this range offers

  • High power
  • High Gain
  • Hermetically sealed packages available
  • Broad band internally matched FET
  • Select modules feature low intermodulation distortion
  • Highest output power of any internally match C-Band device in the world
  • Constant innovation to push the boundaries of output power
  • New extended KU devices 13.75-14.5GHz
  • New X-Band devices released this year
  • Highest gain and efficiency ratings across Radar and Satcom application
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