Silicon Photodiodes

Custom, reliable, and highly sensitive silicon sensors and solutions for X-ray, visible and near-infrared detections.

Hersteller: OSI Laser Diode Inc.

Technologie-Typ: UV-VIS Photodetektoren

OSI-OE’s silicon photodiodes are silicon-based semiconductor light sensors that generate photocurrent when its active area is illuminated by light.

This range includes tailored silicon photodiode solutions for a multitude of high-sensitivity applications. These silicon photodiodes are available as single elements, quadrants, and arrays, and are suitable for soft X-ray to visible and near-infrared.

Silicon and GaAs photodiodes and APD
Wavelengths: < 100nm to 1100nm
Photodiode filter assembly to gain production efficiency
Photodiode amplifier hybrids in one chip
Back-thinned photodiodes to detect gamma and X-ray radiations for medical applications

Two colour sandwich detectors for wider ranges of wavelengths (hybrid - Si and InGaAs or GaAs)
High-speed photodiodes up to 1.25Gbps
Photodiode arrays customised with APD or PIN and optimised in wavelengths and size
Nd-YAG optimised photodiodes

Verfügbare Modellvariationen

Alle verfügbaren Varianten und ein Vergleich ihrer Spezifikationen

Model	Wavelength	Detectivity	Surface	Technology
SiPD series	350 - 1100nm	0.65A/W	Custom higher than 100mm²	PIN
SiBTPD	150 - 1150nm	0.65A/W	Up to 100mm²	Back-thinned photodiode
SiXUV series	18keV - 6eV	10000e-/photon	Up to 100mm²	High perf no scintillator needed
SiAPD series	400 - 1000nm	50A/W	20mm²	Avalanche photodiodes