Manufacturer's part number :


Manufacturer Swissbit


Description :

This Swissbit module is an industry standard 204-pin 8-byte DDR3 SDRAM Small Outline Dual-In-line Memory Module (SO-DIMM) which is organized as x64 high speed CMOS memory arrays. The module uses internally configured octal-bank DDR3 SDRAM devices. The module uses double data rate architecture to achieve highspeed operation. DDR3 SDRAM modules operate from a differential clock (CK and CK#). READ and WRITE accesses to a DDR3 SDRAM module is burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. The burst length is either four or eight locations. An auto precharge function can be enabled to provide a self-timed row precharge that is initiated at the end of a burst access. The DDR3 SDRAM devices have a multibank architecture which allows a concurrent operation that is providing a high effective bandwidth. A self refresh mode is provided and a power-saving 'power-down' mode. All inputs and all full drive-strength outputs are SSTL_15 compatible.

The DDR3 SDRAM module uses the serial presence detect (SPD) function implemented via serial EEPROM using the standard I²C protocol. This nonvolatile storage device contains 256 bytes. The first 128 bytes are utilized by the SO-DIMM manufacturer (Swissbit) to identify the module type, the module's organization and several timing parameters. The second 128 bytes are available to the end user.

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  • 204-pin 64-bit DDR3 Small Outline Dual-In-Line Double Data Rate Synchronous DRAM module
  • Module organization: single rank 128M x 64
  • On-board I2C temperature sensor with integrated serial presence-detect (SPD) EEPROM
  • Gold-contact pads
  • This module is fully pin and functional compatible to the JEDEC PC3-10600 spec. and JEDEC- Standard MO-268. (see www.jedec.org)
  • The pcb and all components are manufactured according to the RoHS compliance specification [EU Directive 2002/95/EC Restriction of Hazardous Substances (RoHS)]
  • DDR3 - SDRAM component Samsung K4B1G0846G
  • 128Mx8 DDR3 SDRAM in PG-TFBGA-78 package
  • VDD = 1.5V ±0.075V, VDDQ 1.5V ±0.075V
  • 1.5V I/O ( SSTL_15 compatible)
  • 8-bit pre-fetch architecture
  • Programmable CAS Latency, CAS Write Latency, Additive Latency, Burst Length and Burst Type.
  • On-Die-Termination (ODT) and Dynamic ODT for improved signal integrity.
  • Refresh. Self Refresh and Power Down Modes.
  • ZQ Calibration for output driver and ODT.
  • System Level Timing Calibration Support via Write Leveling and Multi Purpose Register (MPR) Read Pattern.
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Form Factor 204 Pin SODIMM/SOUDIMM  
ECC No  
Data Rate 8.5 GB/s  
Density 8 GB  
Organisation x64  
Height 1.18 in  
Voltage 1.5 V  
Pins 204  
Package FBGA