60 W, 3100-3500 MHz, 28V, GaN HEMT

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Wolfspeed's CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for 3.1-3.5 GHz S-band pulsed amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.

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  • 3.1 - 3.5 GHz Operation
  • 60 W Peak Power Capability
  • 12 dB Small Signal Gain
  • 60 % Drain Efficiency
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Type GaN HEMT  

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Frequency Range (GHz) 3.1 to 3.5  
Linear Power Gain (dB@ Spec) 11.6  
Power Added Efficiency (%) 40  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 14  
Thermal Resistance (°C/W max) 2.8