50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier

Manufacturer's part number :


Manufacturer Cree


Description :

Wolfspeed's CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

View our wide range of Transistor products

View our portfolio of RF components

See all products from our supplier Wolfspeed

  • Quote and availability


  • 8.4 - 9.6 GHz Operation
  • 80 W POUT typical
  • 10 dB Power Gain
  • 55 % Typical PAE
  • 50 Ohm Internally Matched
  • <0.1 dB Power Droop
Features Similar products
Type GaN HEMT  

  similar products found

Search similar products
Frequency Range (GHz) 8.4 to 9.6  
Linear Power Gain (dB@ Spec) 10  
Power Added Efficiency (%) 45  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 13  
Thermal Resistance (°C/W max) 2.1