30W, DC - 6GHz, 50V, GaN HEMT

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Manufacturer Cree


Description :

The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.

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  • 2.5 - 2.7 GHz Operation
  • 30 W Typical Output Power
  • 21 dB Gain at 5 W PAVE
  • -36 dBc ACLR at 5 W PAVE
  • 32% efficiency at 5 W PAVE
  • High degree of APD and DPD correction can be applied
  • Benefits

  • Telecom
  • Data Link & Tactical Data Link Milcom
  • Milcom
Features Similar products
Type GaN HEMT  

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Frequency Range (GHz) 2.5 to 2.7  
G1dB Power Gain (dB) 21  
Power Added Efficiency (%) 32  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 3.6  
Thermal Resistance (°C/W max) 6.18