30 W, 6.0 GHz, GaN HEMT Die

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Wolfspeed's CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

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  • 15 dB Typical Small Signal Gain at 4 GHz
  • 12 dB Typical Small Signal Gain at 6 GHz
  • 30 W Typical PSAT
  • 28 V Operation
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 6 GHz Operation
  • High Efficiency
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Type GaN HEMT  

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Frequency Range (GHz) 6  
Linear Power Gain (dB@ Spec) 15  
Power Added Efficiency (%) 65  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 7  
Thermal Resistance (°C/W max) 3