25 W, C-band, Unmatched, GaN HEMT

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Wolfspeed's CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/CGH55030P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz.

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  • 4.5 to 6.0 GHz Operation
  • 12 dB Small Signal Gain at 5.65 GHz
  • 30 W typical PSAT
  • 60 % Efficiency at PSAT
  • 28 V Operation
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Type GaN HEMT  

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Frequency Range (GHz) 4.5 to 6  
Linear Power Gain (dB@ Spec) 11  
Power Added Efficiency (%) 60  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 7  
Thermal Resistance (°C/W max) 4.8