240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT

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Wolfspeed's CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.

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  • 3.1 - 3.5 GHz Operation
  • 240 W Typical Output Power
  • 11.6 dB Power Gain at PIN = 42.0 dBm
  • 57 % Typical Power Added Efficiency
  • 50 Ohm Internally Matched
  • <0.2 dB Pulsed Amplitude Droop
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Type GaN HEMT  

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Frequency Range (GHz) 3.1 to 3.5  
Linear Power Gain (dB@ Spec) 11.5  
Power Added Efficiency (%) 48  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 56  
Thermal Resistance (°C/W max) 0.5