240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT

Manufacturer's part number :


Manufacturer Cree


Description :

Wolfspeed's CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.

View our wide range of Transistor products

View our portfolio of RF components

See all products from our supplier Wolfspeed

  • Quote and availability


  • 2.7 - 3.1 GHz Operation
  • 12 dB Power Gain
  • 60 % Power Added Efficiency
  • < 0.2 dB Pulsed Amplitude Droop
Features Similar products
Type GaN HEMT  

  similar products found

Search similar products
Frequency Range (GHz) 2.7 to 3.1  
Linear Power Gain (dB@ Spec) 12  
Power Added Efficiency (%) 49  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 56  
Thermal Resistance (°C/W max) 0.5