200 W, 1800-2200 MHz, GaN HEMT for LTE

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Description :

Wolfspeed's CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 -2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.

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  • 1.8 - 2.2 GHz Operation
  • 18 dB Gain
  • -35 dBc ACLR at 50 W PAVE
  • 31-35 % Efficiency at 50 W PAVE
  • High Degree of DPD Correction Can be Applied
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Type GaN HEMT  

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Frequency Range (GHz) 1.8 to 2.2  
Linear Power Gain (dB@ Spec) 18  
Power Added Efficiency (%) 65  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 28.8  
Thermal Resistance (°C/W max) 1.54