15W, DC - 6GHz, 50V, GaN HEMT

Manufacturer's part number :


Manufacturer Cree


Description :

The CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT devices are suitable for 3300-3500MHz, 4900-5900MHz, 700-960MHz, 1800-2200MHz, 2500-2700MHz and extended S and C Band applications. The CGHV27015S operates from a 50 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.

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  • 2.5 - 2.7 GHz Operation
  • 15 W Typical Output Power
  • 21 dB Gain at 2.5 W PAVE
  • -38 dBc ACLR at 2.5 W PAVE
  • 32% efficiency at 2.5 W PAVE
  • High degree of APD and DPD correction can be applied
  • Benefits

  • Telecom
  • Data Link & Tactical Data Link Milcom
  • Milcom
Features Similar products
Type GaN HEMT  

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Frequency Range (GHz) 2.4 to 2.7  
G1dB Power Gain (dB) 21  
Power Added Efficiency (%) 32  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 1.78  
Thermal Resistance (°C/W max) 11.1