100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE

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Description :

Wolfspeed's CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 -2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is supplied in a ceramic/metal pill and flange packages.

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  • 2.5 - 2.7 GHz Operation
  • 18.0 dB Gain
  • -37 dBc ACLR at 25 W PAVE
  • 33 % Efficiency at 25 W PAVE
  • High Degree of DPD Correction Can be Applied
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Type GaN HEMT  

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Frequency Range (GHz) 2.5 to 2.7  
Linear Power Gain (dB@ Spec) 18  
Power Added Efficiency (%) 33  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 14.4  
Thermal Resistance (°C/W max) 2.95