Diodo a emissione infrarossa GaAs

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Produttore Honeywell

Honeywell - Sensors

Descrizione :

The SEP8507 is a gallium arsenide infrared emitting diode molded in an end-emitting red plastic package. The chip is positioned to emit radiation from the top of the package. Lead lengths are staggered to provide a simple method of polarity identification.

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  • End-emitting plastic package
  • 135° (nominal) beam angle
  • 935 nm wavelength
  • Low profile for design flexibility
  • Mechanically and spectrally matched to SDP8407 phototransistor
Caratteristiche Prodotti simili
Output Wavelength (nm) 935  

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Spectral Bandwidth (nm) 50  
Spectral Shift with Temperature (nm/°C) 0.3  
Power Output 0.4 mW (Min)  
Beam Angle (degree) 135  
Forward Voltage (V) 1.5  
Forward Current (mA) 20  
Reverse Breakdown Voltage (V) 3  
Rise/Fall Time (µs) 0.7  
Power Dissipation (mW) 100  
Operating Temperature Range (°C) -40 to 85