AlGaAs Infrared Emitting Diode

Manufacturer's part number :

SE1470-003L

Manufacturer Honeywell

Honeywell - Sensors

Description :

The SE1470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a glass lensed metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature (SE1470-XXXL). Both leads are flexible and may be formed as required to fit various mounting configurations. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.

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    Features

  • Compact metal-can coaxial package
  • 24° (nominal) beam angle
  • 880 nm wavelength
  • Higher output power than GaAs at equivalent drive currents
  • Wide operating temperature range -55°C to 125°C [-67°F to 257°F]
  • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor, and SD1410 photodarlington
  • Benefits

  • High intensity infrared emitter mounted in a glass-lensed metal-can coaxial package. May have a tab or second lead welded to the can as an optional feature. Leads are flexible to fit various mounting configurations. Exhibits 70 % greater power intensity than GaAs devices at the same forward current.
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Output Wavelength (nm) 880  

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Spectral Bandwidth (nm) 80  
Spectral Shift with Temperature (nm/°C) 0.2  
Power Output 1.1 to 4.5 mW/cm²  
Beam Angle (degree) 24  
Forward Voltage (V) 1.8  
Forward Current (mA) 20  
Reverse Breakdown Voltage (V) 3  
Rise/Fall Time (µs) 0.7  
Power Dissipation (mW) 75  
Operating Temperature Range (°C) -55 to 125