60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz

Manufacturer's part number :

CGH27060

Manufacturer Cree

Wolfspeed

Description :

Wolfspeed's CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange package.

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    Features

  • VHF - 3.0 GHz Operation
  • 14 dB Small Signal Gain
  • 8.0 W PAVE at < 2.0 % EVM
  • 27 % Drain Efficiency at 8 W Average Power
  • WiMAX Fixed Access 802.16-2004 OFDM
  • WiMAX Mobile Access 802.16e OFDMA
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Type GaN HEMT  

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Frequency Range (GHz) VHF to 3  
Linear Power Gain (dB@ Spec) 13  
Power Added Efficiency (%) 24  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 14  
Thermal Resistance (°C/W max) 2.8