60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access

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Wolfspeed's CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9 GHz WiMAX and BWA linear amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Wolfspeed GaN-on-SiC HEMTs are highly correctable, enabling even greater efficiency when used with digital pre-distortion (DPD).

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  • 3.3 - 3.9 GHz Operation
  • 60 W Peak Power Capability
  • 12 dB Small Signal Gain
  • 8.0 W PAVE at < 2.0 % EVM
  • 25 % Drain Efficiency at 8 W PAVE
  • WiMAX Fixed Access 802.16-2004 OFDM
  • WiMAX Mobile Access 802.16e OFDMA
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Type GaN HEMT  

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Frequency Range (GHz) 3.3 to 3.9  
Linear Power Gain (dB@ Spec) 11.5  
Power Added Efficiency (%) 23  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 14  
Thermal Resistance (°C/W max) 2.8