6 W, RF Power GaN HEMT

Manufacturer's part number :

CGH40006P

Manufacturer Cree

Wolfspeed

Description :

Wolfspeed's CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package.

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    Features

  • Up to 6 GHz Operation
  • 13 dB Small Signal Gain at 2.0 GHz
  • 11 dB Small Signal Gain at 6.0 GHz
  • 8 W typical at PIN = 32 dBm
  • 65 % Efficiency at PIN = 32 dBm
  • 28 V Operation
Features Similar products
Type GaN HEMT  

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Frequency Range (GHz) 6  
Linear Power Gain (dB@ Spec) 13  
Power Added Efficiency (%) 65  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 2.1  
Thermal Resistance (°C/W max) 9.5