6 W, RF Power GaN HEMT, Plastic

Manufacturer's part number :

CGH40006S

Manufacturer Cree

Wolfspeed

Description :

Wolfspeed's CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package.

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    Features

  • Up to 6 GHz Operation
  • 13 dB Small Signal Gain at 2.0 GHz
  • 11 dB Small Signal Gain at 6.0 GHz
  • 8 W typical at PIN = 32 dBm
  • 65 % Efficiency at PIN = 32 dBm
  • 28 V Operation
  • 3mm x 3mm Package
Features Similar products
Type GaN HEMT  

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Frequency Range (GHz) 6  
Linear Power Gain (dB@ Spec) 11.8  
Power Added Efficiency (%) 53  
Channel Temperature (°C) 175  
Saturated Drain-Source Current @spec (A) 2.1  
Thermal Resistance (°C/W max) 10.1