50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier

Manufacturer's part number :

CGHV96050F1

Manufacturer Cree

Wolfspeed

Description :

Wolfspeed's CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

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    Features

  • 7.9 - 8.4 GHz Operation
  • 80 W POUT typical
  • >13 dB Power Gain
  • 33 % Typical Linear PAE
  • 50 Ohm Internally Matched
  • <0.1 dB Power Droop
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Type GaN HEMT  

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Frequency Range (GHz) 7.9 to 8.4  
Linear Power Gain (dB@ Spec) 15.6  
Power Added Efficiency (%) 27  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 13  
Thermal Resistance (°C/W max) 2.1