400 W 2900 - 3500 MHz 50-Ohm Input/Output Matched GaN HEMT

Manufacturer's part number :

CGHV35400

Manufacturer Cree

Wolfspeed

Description :

The CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) from Wolfspeed designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic, metal flange package, type 440210.

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    Features

  • 2.9 - 3.5 GHz Operation
  • 400 W Typical Output Power
  • 10.5 dB Power Gain
  • 60% Typical Drain Efficiency
  • 50 Ohm Internally Matched
  • <0.3 dB Pulsed Amplitude Droop
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Type GaN  

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Frequency Range (GHz) 2.9 to 3.5  
G1dB Power Gain (dB) 10.5  
Power Added Efficiency (%) 60  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 75.5  
Thermal Resistance (°C/W max) 0.3