30W, DC - 6GHz, 28V, GaN HEMT

Manufacturer's part number :

CGH27030S

Manufacturer Cree

Wolfspeed

Description :

The CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.

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    Features

  • Features for 28 V in CGH27030S-TB1
    • 1.8 - 2.2 GHz Operation
    • 30 W Typical Output Power
    • 18 dB Gain at 5 W PAVE
    • -39 dBc ACLR at 5 W PAVE
    • 33% efficiency at 5 W PAVE
    • High degree of APD and DPD correction can be applied
  • Features for 28 V in CGH27030S-TB2
    • 2.3 - 2.7 GHz Operation
    • 30 W Typical Output Power
    • 18.5 dB Gain at 5 W PAVE
    • -39 dBc ACLR at 5 W PAVE
    • 36% efficiency at 5 W PAVE
    • High degree of APD and DPD correction can be applied

    Benefits

  • Telecom
  • Data Link & Tactical Data Link Milcom
  • Milcom
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Type GaN HEMT  

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Frequency Range (GHz) 2.3 to 2.7  
G1dB Power Gain (dB) 18  
Power Added Efficiency (%) 33  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 7  
Thermal Resistance (°C/W max) 3.43