30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX

Manufacturer's part number :

CGH35030

Manufacturer Cree

Wolfspeed

Description :

Wolfspeed's CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.

View our wide range of Transistor products

View our portfolio of RF components

See all products from our supplier Wolfspeed

RoHS

RoHS

  • Quote and availability

    Features

  • 3.3 - 3.9 GHz Operation
  • 30 W Peak Power Capability
  • 12 dB Small Signal Gain
  • 4.0 W PAVE at < 2.0 % EVM
  • 25 % Drain Efficiency at 4 W PAVE
  • WiMAX Fixed Access 802.16-2004 OFDM
  • WiMAX Mobile Access 802.16e OFDMA
Features Similar products
Type GaN HEMT  

  similar products found

Search similar products
Frequency Range (GHz) 3.3 to 3.9  
Linear Power Gain (dB@ Spec) 11.5  
Power Added Efficiency (%) 25  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 7  
Thermal Resistance (°C/W max) 4.8