200 W, 2500-2700 MHz, GaN HEMT for LTE

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Wolfspeed's CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.

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  • 2.5 - 2.7 GHz Operation
  • 16 dB Gain
  • -37 dBc ACLR at 50 W PAVE
  • 29 % Efficiency at 50 W PAVE
  • High Degree of DPD Correction Can be Applied
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Type GaN HEMT  

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Frequency Range (GHz) 2.5 to 2.7  
Linear Power Gain (dB@ Spec) 15.25  
Power Added Efficiency (%) 30.5  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 28.8  
Thermal Resistance (°C/W max) 1.54