120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM

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Description :

Wolfspeed's CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package.

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  • UHF - 2.5 GHz Operation
  • 21 dB Gain
  • -38 dBc ACLR at 20 W PAVE
  • 35 % Efficiency at 20 W PAVE
  • High Degree of DPD Correction Can be Applied
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Type GaN HEMT  

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Frequency Range (GHz) UHF to 2.5  
Linear Power Gain (dB@ Spec) 21.5  
Power Added Efficiency (%) 35  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 28  
Thermal Resistance (°C/W max) 1.7