120 W, RF Power GaN HEMT

Manufacturer's part number :


Manufacturer Cree


Description :

Wolfspeed's CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120P ideal for linear and compressed amplifier circuits. The transistor is available in a metal-ceramic pill package.

View our wide range of Transistor products

View our portfolio of RF components

See all products from our supplier Wolfspeed



  • Quote and availability


  • Up to 2.5 GHz Operation
  • 20 dB Small Signal Gain at 1.0 GHz
  • 15 dB Small Signal Gain at 2.0 GHz
  • 120 W Typical PSAT
  • 70 % Efficiency at PSAT
  • 28 V Operation
Features Similar products
Type GaN HEMT  

  similar products found

Search similar products
Frequency Range (GHz) 2.5  
Linear Power Gain (dB@ Spec) 15.5  
Power Added Efficiency (%) 60  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 28