120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE

Manufacturer's part number :

CGH25120F

Manufacturer Cree

Wolfspeed

Description :

Wolfspeed's CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.

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    Features

  • 2.3 - 2.7 GHz Operation
  • 13 dB Gain
  • -32 dBc ACLR at 20 W PAVE
  • 30 % Efficiency at 20 W PAVE
  • High Degree of DPD Correction Can be Applied
Features Similar products
Type GaN HEMT  

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Frequency Range (GHz) 2.3 to 2.7  
Linear Power Gain (dB@ Spec) 12.5  
Power Added Efficiency (%) 32  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 28  
Thermal Resistance (°C/W max) 1.5