10 W, RF Power GaN HEMT

Manufacturer's part number :


Manufacturer Cree


Description :

Wolfspeed's CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down, flange and solderdown, pill packages.

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  • Up to 6 GHz Operation
  • 16 dB Small Signal Gain at 2.0 GHz
  • 14 dB Small Signal Gain at 4.0 GHz
  • 13 W typical PSAT
  • 65 % Efficiency at PSAT
  • 28 V Operation
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Type GaN HEMT  

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Frequency Range (GHz) 6  
Linear Power Gain (dB@ Spec) 14.5  
Power Added Efficiency (%) 65  
Channel Temperature (°C) 225  
Saturated Drain-Source Current @spec (A) 3.5  
Thermal Resistance (°C/W max) 8