25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

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Wolfspeed's CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a Copper-Tungsten heat-sink.

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  • 24 dB Small Signal Gain
  • 25 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
Features Similar products
Frequency Range (GHz) 2.5 to 6  

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Gain Typ. (dB) 24  
Supply Voltage (V) 28  
Supply Current (mA) 1200  
Package 780019