25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier
Manufacturer's part number :
Wolfspeed's CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
View our wide range of Amplifier products
View our portfolio of RF components
See all products from our supplier Wolfspeed
Quote and availability