2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

Manufacturer's part number :

CMPA0060002F

Manufacturer Cree

Wolfspeed

Description :

Wolfspeed's CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink.

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    Features

  • 17 dB Small Signal Gain
  • 3 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
  • 0.5 inch x 0.5 inch total product size
Features Similar products
Frequency Range (GHz) 0.02 to 6  

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Gain Typ. (dB) 17  
Supply Voltage (V) 28  
Supply Current (mA) 100  
Package 12.7 x 12.7